Dimensions:
15.87 x 4.82 x 20.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
333 W
Maximum Collector Emitter Voltage:
1000 V
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT Trench Field Stop 1000V 80A 333W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 40A
Td (on/off) @ 25°C:
29ns/285ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
265nC
Base Part Number:
FGH40
Voltage - Collector Emitter Breakdown (Max):
1000V
Reverse Recovery Time (trr):
78ns
Switching Energy:
2.35mJ (on), 1.15mJ (off)
Test Condition:
600V, 40A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
120A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
333W
Customer Reference:
This is manufactured by ON Semiconductor. The manufacturer part number is FGH40T100SMD. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 333 w maximum power dissipation. Whereas features a 1000 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 80a. It features igbt trench field stop 1000v 80a 333w through hole to-247-3. Features 2.3v @ 15v, 40a. Td (on/off) value of 29ns/285ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 265nc gate charge. Base Part Number: fgh40. The maximum collector emitter breakdown voltage of the product is 1000v. It has a trr (reverse recovery time) of 78ns. Provide switching energy up to 2.35mj (on), 1.15mj (off). Test condition included 600v, 40a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 333w.
Reviews
Don’t hesitate to ask questions for better clarification.