ON Semiconductor FGA50N100BNTDTU
Product Information
Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
63 W
Maximum Collector Emitter Voltage:
1000 V
Channel Type:
N
Maximum Continuous Collector Current:
50 A
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-3P
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Gate Charge:
275nC
Base Part Number:
FGA50N100
Detailed Description:
IGBT NPT and Trench 1000V 50A 156W Through Hole TO-3P
Reverse Recovery Time (trr):
1.5µs
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
50A
Vce(on) (Max) @ Vge, Ic:
2.9V @ 15V, 60A
Supplier Device Package:
TO-3P
Voltage - Collector Emitter Breakdown (Max):
1000V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
156W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
IGBT Type:
NPT and Trench
Current - Collector Pulsed (Icm):
100A
Manufacturer:
ON Semiconductor
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Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor FGA50N100BNTDTU. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FGA50N100BNTDTU.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14520488 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14520488.
Yes. We ship FGA50N100BNTDTU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FGA50N100BNTDTU. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 63 w maximum power dissipation. Whereas features a 1000 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Features 275nc gate charge. Base Part Number: fga50n100. It features igbt npt and trench 1000v 50a 156w through hole to-3p. It has a trr (reverse recovery time) of 1.5µs. The maximum collector current includes 50a. Features 2.9v @ 15v, 60a. to-3p is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1000v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 156w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features an IGBT npt and trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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