ON Semiconductor FGA30N120FTDTU
Product Information
Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
339 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
60 A
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-3PN
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Gate Charge:
208nC
Base Part Number:
FGA30N120
Detailed Description:
IGBT Trench Field Stop 1200V 60A 339W Through Hole TO-3PN
Reverse Recovery Time (trr):
730ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 30A
Supplier Device Package:
TO-3PN
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
339W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
90A
Manufacturer:
ON Semiconductor
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Yes. We ship FGA30N120FTDTU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FGA30N120FTDTU. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 339 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3pn. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Features 208nc gate charge. Base Part Number: fga30n120. It features igbt trench field stop 1200v 60a 339w through hole to-3pn. It has a trr (reverse recovery time) of 730ns. The maximum collector current includes 60a. Features 2v @ 15v, 30a. to-3pn is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 339w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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