ON Semiconductor FGA15S125P
Product Information
Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
136 W
Maximum Collector Emitter Voltage:
1250 V
Channel Type:
N
Maximum Continuous Collector Current:
30 A
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-3PN
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Gate Charge:
129nC
Base Part Number:
FGA15
Detailed Description:
IGBT Trench 1250V 30A 136W Through Hole TO-3P
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
30A
Vce(on) (Max) @ Vge, Ic:
2.72V @ 15V, 15A
Supplier Device Package:
TO-3P
Manufacturer Standard Lead Time:
30 Weeks
Voltage - Collector Emitter Breakdown (Max):
1250V
Packaging:
Tube
Operating Temperature:
-55°C ~ 175°C (TJ)
Power - Max:
136W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
IGBT Type:
Trench
Current - Collector Pulsed (Icm):
45A
Manufacturer:
ON Semiconductor
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Yes. We ship FGA15S125P Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FGA15S125P. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 136 w maximum power dissipation. Whereas features a 1250 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 30 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3pn. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. Features 129nc gate charge. Base Part Number: fga15. It features igbt trench 1250v 30a 136w through hole to-3p. The maximum collector current includes 30a. Features 2.72v @ 15v, 15a. to-3p is the supplier device package value. It has typical 30 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1250v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 136w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features an IGBT trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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