This is IGBT 50 A 900 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT50MR21,Q(O. The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. Provides up to 230 w maximum power dissipation. Whereas features a 900 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. It has about 0.4µs switching speed . It has approximately 1500pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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This is IGBT 50 A 900 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT50MR21,Q(O. The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. Provides up to 230 w maximum power dissipation. Whereas features a 900 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. It has about 0.4µs switching speed . It has approximately 1500pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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