GT40WR21,Q(O Toshiba IGBT, 40 A 1800 V, 3-Pin TO-3P
Product Information
Dimensions:
15.5 x 4.5 x 20mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
375 W
Maximum Collector Emitter Voltage:
1800 V
Channel Type:
N
Maximum Continuous Collector Current:
40 A
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-3P
Switching Speed:
0.55µs
Gate Capacitance:
4500pF
Maximum Operating Temperature:
175 °C
Pin Count:
3
Transistor Configuration:
Single
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You can order Toshiba brand products with GT40WR21,Q(O directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
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Yes. We ship GT40WR21,Q(O Internationally to many countries around the world.
This is IGBT 40 A 1800 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT40WR21,Q(O. The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. Provides up to 375 w maximum power dissipation. Whereas features a 1800 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 40 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. It has about 0.55µs switching speed . It has approximately 4500pf gate capacitance . It has a maximum operating temperature of 175 °c. It contains 3 pins. The product offers single transistor configuration.
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