GT40QR21,F(O Toshiba IGBT, 40 A 1200 V, 3-Pin TO-3P

Enrgtech Part No: ET14050101
|
Manufacturer Part No:
GT40QR21,F(O
|
Manufacturer: Toshiba

GT40QR21-F-O GT40QR21,F(O Toshiba IGBT, 40 A 1200 V, 3-Pin TO-3P

Product Information

Automotive Standard:

Maximum Power Dissipation Pd:

230W

Maximum Gate Emitter Voltage VGEO:

±25 V

Maximum Collector Emitter Voltage Vceo:

1200V

Series:

6.5th generation

Maximum Collector Emitter Saturation Voltage VceSAT:

1.9V

Channel Type:

Type N

Package Type:

TO-3P

Energy Rating:

0.29mJ

Minimum Operating Temperature:

-55°C

Maximum Continuous Collector Current Ic:

40A

Standards/Approvals:

RoHS

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This is IGBT 40 A 1200 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT40QR21,F(O. The product complies with automotive standard - no. The product 6.5th generation, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of to-3p. It has approximately 0.29mj energy rating . Whereas, the minimum operating temperature of the product is -55°c. It has about 2.5mhz switching speed . discrete igbt is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. It contains 3 pins. It has a through hole type mount .

GT40QR21, Silicon N-Channel IGBT(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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GT40QR21,F(O Toshiba IGBT, 40 A 1200 V, 3-Pin TO-3P

GT40QR21,F(O

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