This is IGBT 20 A 600 V 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is GT20J341. The given dimensions of the product include 10 x 4.5 x 15mm. The product is available in through hole configuration. Provides up to 45 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 20 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-220sis. It has about 100khz switching speed . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
GT20J341, Silicon N-Channel IGBT Data Sheet(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is IGBT 20 A 600 V 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is GT20J341. The given dimensions of the product include 10 x 4.5 x 15mm. The product is available in through hole configuration. Provides up to 45 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 20 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-220sis. It has about 100khz switching speed . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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Don’t hesitate to ask questions for better clarification.