GT50JR21 Toshiba IGBT, 50 A 600 V, 3-Pin TO-3P
Product Information
Dimensions:
15.5 x 4.5 x 20mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
230 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
50 A
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-3P
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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FAQs
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Yes. We ship GT50JR21 Internationally to many countries around the world.
This is IGBT 50 A 600 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT50JR21. The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. Provides up to 230 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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