ON Semiconductor NGTB30N135IHR1WG

NGTB30N135IHR1WG ON Semiconductor
NGTB30N135IHR1WG
NGTB30N135IHR1WG
ON Semiconductor

Product Information

Dimensions:
16.25 x 5.3 x 21.4mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
394 W
Maximum Collector Emitter Voltage:
1350 V
Channel Type:
N
Maximum Continuous Collector Current:
60 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-40 °C
Gate Capacitance:
5530pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Gate Charge:
220nC
Base Part Number:
NGTB30
Detailed Description:
IGBT Trench Field Stop 1350V 60A 394W Through Hole TO-247-3
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
3V @ 15V, 30A
Operating Temperature:
-40°C ~ 175°C (TJ)
Supplier Device Package:
TO-247-3
Packaging:
Tube
Switching Energy:
630µA (off)
Td (on/off) @ 25°C:
-/200ns
Power - Max:
394W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
1350V
IGBT Type:
Trench Field Stop
Test Condition:
600V, 30A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
120A
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB30N135IHR1WG. The given dimensions of the product include 16.25 x 5.3 x 21.4mm. The product is available in through hole configuration. Provides up to 394 w maximum power dissipation. Whereas features a 1350 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -40 °c. It has approximately 5530pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. Features 220nc gate charge. Base Part Number: ngtb30. It features igbt trench field stop 1350v 60a 394w through hole to-247-3. The maximum collector current includes 60a. Features 3v @ 15v, 30a. The product has -40°c ~ 175°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 630µa (off). Td (on/off) value of -/200ns. The maximum power of the product is 394w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 1350v. Features an IGBT trench field stop type. Test condition included 600v, 30a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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NGTB30N135IHR1WG IGBT with Free Wheeling Diode Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Assembly Change 29/Mar/2021(PCN Assembly/Origin)
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NGTB30N135IHR1WG(Datasheets)
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Mult Dev EOL 29/Jan/2021(PCN Obsolescence/ EOL)

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