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ON Semiconductor NGTB40N120FL2WG

NGTB40N120FL2WG ON Semiconductor
NGTB40N120FL2WG
NGTB40N120FL2WG
ON Semiconductor

Product Information

Dimensions:
16.25 x 5.3 x 21.4mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
535 W
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT Trench Field Stop 1200V 80A 535W Through Hole TO-247
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 40A
Td (on/off) @ 25°C:
116ns/286ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
313nC
Base Part Number:
NGTB40
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
240ns
Switching Energy:
3.4mJ (on), 1.1mJ (off)
Test Condition:
600V, 40A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
200A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Packaging:
Tube
Power - Max:
535W
Customer Reference:
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB40N120FL2WG. The given dimensions of the product include 16.25 x 5.3 x 21.4mm. The product is available in through hole configuration. Provides up to 535 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 80a. It features igbt trench field stop 1200v 80a 535w through hole to-247. Features 2.4v @ 15v, 40a. Td (on/off) value of 116ns/286ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 313nc gate charge. Base Part Number: ngtb40. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 240ns. Provide switching energy up to 3.4mj (on), 1.1mj (off). Test condition included 600v, 40a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 535w.

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ESD Control Selection Guide V1(Technical Reference)
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NGTB40N120FL2WG, IGBT (Insulated Gate Bipolar Transistor) - Field Stop II Data Sheet(Technical Reference)
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Contact mask change 11/Jun/2021(PCN Assembly/Origin)
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Contact Mask Change 17/Dec/2020(PCN Design/Specification)
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NGTB40N120FL2WG(Datasheets)

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You will get a confirmation email regarding your order of ON Semiconductor NGTB40N120FL2WG. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NGTB40N120FL2WG.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10959649 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10959649.
Yes. We ship NGTB40N120FL2WG Internationally to many countries around the world.