Infineon, BCR135SH6327XTSA1, Dual NPN Digital Transistor, 100 mA 50 V 10 kΩ, Ratio Of 0.21, 6-Pin SOT-363

BCR135SH6327XTSA1 Infineon, , Dual NPN Digital Transistor, 100 mA 50 V 10 kΩ, Ratio Of 0.21, 6-Pin SOT-363
BCR135SH6327XTSA1
BCR135SH6327XTSA1
ET16792256
ET16792256
Digital Transistors
Infineon

Product Information

Minimum DC Current Gain:
70
Transistor Type:
NPN
Dimensions:
2 x 1.25 x 0.8mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
250 mW
Maximum Continuous Collector Current:
100 mA
Maximum Collector Emitter Voltage:
50 V
Height:
0.8mm
Width:
1.25mm
Length:
2mm
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum Collector Emitter Saturation Voltage:
0.3 V
Typical Resistor Ratio:
0.21
Transistor Configuration:
Isolated
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Typical Input Resistor:
10 kΩ
RoHs Compliant
Checking for live stock

This is Dual NPN Digital Transistor 100 mA 50 V 10 kΩ Ratio Of 0.21 6-Pin SOT-363 manufactured by Infineon. The manufacturer part number is BCR135SH6327XTSA1. It features up to 70 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 2 x 1.25 x 0.8mm. The product is available in surface mount configuration. Provides up to 250 mw maximum power dissipation. The product has a maximum 100 ma continuous collector current . Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 0.8mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. The product has a maximum 0.3 v collector emitter saturation voltage . In addition, it has a typical 0.21 resistor ratio . The product offers isolated transistor configuration. It has a maximum operating temperature of +150 °c. It contains 6 pins. Whereas, it has a typical 10 kω input resistor .

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BCR135, NPN Silicon Digital Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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