Minimum DC Current Gain:
100
Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 15.95mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
80 W
Maximum Continuous Collector Current:
12 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Collector Cut-off Current:
1 mA, 100 μA
Height:
15.95mm
Width:
4.5mm
Length:
9.9mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
12 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 5A, 3V
edacadModel:
BDW93CTU Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
3V @ 100mA, 10A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/976571
Transistor Type:
NPN - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Power - Max:
80 W
Base Product Number:
BDW93
ECCN:
EAR99
This is NPN Darlington Transistor 12 A 100 V HFE:100 3-Pin TO-220 manufactured by onsemi. The manufacturer part number is BDW93CTU. It features up to 100 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 9.9 x 4.5 x 15.95mm. The product is available in through hole configuration. Provides up to 80 w maximum power dissipation. The product has a maximum 12 a continuous collector current . Additionally, it has 100 v maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). In addition, the product has a maximum 4 v base emitter saturation voltage . It has a maximum 1 ma, 100 μa collector cut-off current . In addition, the height is 15.95mm. Furthermore, the product is 4.5mm wide. Its accurate length is 9.9mm. The package is a sort of to-220. It consists of 1 elements per chip. The product has a maximum 3 v collector emitter saturation voltage . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 12 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 100 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 750 @ 5a, 3v is the minimum DC current gain at given voltage. The 3v @ 100ma, 10a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. In addition, 1ma is the maximum current at collector cutoff. to-220-3 is the supplier device package value. The maximum power of the product is 80 w. Moreover, it corresponds to bdw93, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.