Minimum DC Current Gain:
5000
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Continuous Collector Current:
500 mA
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
30 V
Maximum Collector Cut-off Current:
0.0001mA
Height:
4.58mm
Width:
3.86mm
Length:
4.58mm
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Emitter Base Voltage:
10 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
500 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
30 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
10000 @ 100mA, 5V
edacadModel:
KSP13BU Models
Frequency - Transition:
125MHz
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1047419
Transistor Type:
NPN - Darlington
Package:
Bulk
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
9 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
Base Product Number:
KSP13
ECCN:
EAR99
This is NPN Darlington Transistor 500 mA 30 V HFE:5000 3-Pin TO-92 manufactured by onsemi. The manufacturer part number is KSP13BU. It features up to 5000 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. The product has a maximum 500 ma continuous collector current . Additionally, it has 30 v maximum collector base voltage. Whereas features a 30 v of collector emitter voltage (max). It has a maximum 0.0001ma collector cut-off current . In addition, the height is 4.58mm. Furthermore, the product is 3.86mm wide. Its accurate length is 4.58mm. The package is a sort of to-92. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 1.5 v collector emitter saturation voltage . It features a 10 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 30 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). Furthermore, 10000 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 125mhz. The 1.5v @ 100µa, 100ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in bulk package . Its typical moisture sensitivity level is not applicable. It has a long 9 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. Moreover, it corresponds to ksp13, a base product number of the product. The product is designated with the ear99 code number.
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