Dimensions:
15.75 x 10.28 x 4.82mm
Maximum Collector Emitter Saturation Voltage:
2 V
Maximum Collector Cut-off Current:
20µA
Width:
10.28mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
8 A
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
4.5 V
Maximum Emitter Base Voltage:
5 V
Length:
15.75mm
Pin Count:
3
Minimum DC Current Gain:
100
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Collector Emitter Voltage:
60 V
Height:
4.82mm
Minimum Operating Temperature:
-65 °C
Current - Collector (Ic) (Max):
8 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 4A, 4V
edacadModel:
2N6040G Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
2V @ 16mA, 4A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/918256
Transistor Type:
PNP - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
20µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
75 W
Base Product Number:
2N6040
ECCN:
EAR99
This is ON Semi PNP Darlington Transistor 8 A 60 V HFE:100 3-Pin TO-220AB manufactured by onsemi. The manufacturer part number is 2N6040G. The given dimensions of the product include 15.75 x 10.28 x 4.82mm. The product has a maximum 2 v collector emitter saturation voltage . It has a maximum 20µa collector cut-off current . Furthermore, the product is 10.28mm wide. The product offers single transistor configuration. The product has a maximum 8 a continuous collector current . The package is a sort of to-220ab. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has 60 v maximum collector base voltage. In addition, the product has a maximum 4.5 v base emitter saturation voltage . It features a 5 v of maximum emitter base voltage. Its accurate length is 15.75mm. It contains 3 pins. It features up to 100 of minimum DC current gain. The product is available in through hole configuration. Provides up to 75 w maximum power dissipation. Whereas features a 60 v of collector emitter voltage (max). In addition, the height is 4.82mm. Whereas, the minimum operating temperature of the product is -65 °c. The maximum collector current includes 8 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 1000 @ 4a, 4v is the minimum DC current gain at given voltage. The 2v @ 16ma, 4a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp - darlington type. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 20µa is the maximum current at collector cutoff. to-220 is the supplier device package value. The maximum power of the product is 75 w. Moreover, it corresponds to 2n6040, a base product number of the product. The product is designated with the ear99 code number.
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