Dimensions:
11.04 x 7.74 x 2.66mm
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Cut-off Current:
100µA
Width:
7.74mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
4 A
Package Type:
TO-225AA
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
80 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Emitter Base Voltage:
5 V
Length:
11.04mm
Pin Count:
3
Minimum DC Current Gain:
100
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Voltage:
80 V
Height:
2.66mm
Minimum Operating Temperature:
-65 °C
Current - Collector (Ic) (Max):
4 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 2A, 3V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
REACH Status:
REACH Unaffected
Transistor Type:
NPN - Darlington
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126
Power - Max:
40 W
Base Product Number:
2N6039
ECCN:
EAR99
This is NPN Darlington Transistor 4 A 80 V HFE:100 3-Pin TO-225AA manufactured by onsemi. The manufacturer part number is 2N6039G. The given dimensions of the product include 11.04 x 7.74 x 2.66mm. The product has a maximum 3 v collector emitter saturation voltage . It has a maximum 100µa collector cut-off current . Furthermore, the product is 7.74mm wide. The product offers single transistor configuration. The product has a maximum 4 a continuous collector current . The package is a sort of to-225aa. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 80 v maximum collector base voltage. In addition, the product has a maximum 4 v base emitter saturation voltage . It features a 5 v of maximum emitter base voltage. Its accurate length is 11.04mm. It contains 3 pins. It features up to 100 of minimum DC current gain. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. Whereas features a 80 v of collector emitter voltage (max). In addition, the height is 2.66mm. Whereas, the minimum operating temperature of the product is -65 °c. The maximum collector current includes 4 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 80 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 750 @ 2a, 3v is the minimum DC current gain at given voltage. The 3v @ 40ma, 4a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100µa is the maximum current at collector cutoff. to-126 is the supplier device package value. The maximum power of the product is 40 w. Moreover, it corresponds to 2n6039, a base product number of the product. The product is designated with the ear99 code number.
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