Toshiba TTD1415B,S4X(S Dual PNP Darlington Pair, 7 A 100 V HFE:1000, 3-Pin TO-220SIS
Product Information
Dimensions:
10 x 4.5 x 15mm
Maximum Collector Emitter Saturation Voltage:
2 V
Maximum Collector Cut-off Current:
2µA
Width:
4.5mm
Base Current:
0.7A
Maximum Continuous Collector Current:
7 A
Package Type:
TO-220SIS
Number of Elements per Chip:
2
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
120 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Emitter Base Voltage:
6 V
Length:
100mm
Pin Count:
3
Minimum DC Current Gain:
1000
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W @ 25 °C
Maximum Collector Emitter Voltage:
100 V
Height:
15mm
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Yes. Our products in Darlington Pairs category are shipped in lowest possible time.
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Yes. We ship TTD1415B,S4X(S Internationally to many countries around the world.
This is Dual PNP Darlington Pair 7 A 100 V HFE:1000 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TTD1415B,S4X(S. The given dimensions of the product include 10 x 4.5 x 15mm. The product has a maximum 2 v collector emitter saturation voltage . It has a maximum 2µa collector cut-off current . Furthermore, the product is 4.5mm wide. With 0.7a of base current . The product has a maximum 7 a continuous collector current . The package is a sort of to-220sis. It consists of 2 elements per chip. The product is available in single configuration. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has 120 v maximum collector base voltage. In addition, the product has a maximum 2 v base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. Its accurate length is 100mm. It contains 3 pins. It features up to 1000 of minimum DC current gain. The product is available in through hole configuration. Provides up to 25 w @ 25 °c maximum power dissipation. Whereas features a 100 v of collector emitter voltage (max). In addition, the height is 15mm.
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