Toshiba TTD1409B,S4X(S Dual NPN Darlington Pair, 6 A 400 V HFE:100, 3-Pin TO-220SIS

Toshiba

Product Information

Maximum Continuous Collector Current:
6 A
Minimum DC Current Gain:
100
Transistor Type:
NPN
Dimensions:
10 x 4.5 x 15mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W @ 25 °C
Maximum Operating Temperature:
+150 °C
Maximum Collector Base Voltage:
600 V
Maximum Collector Emitter Voltage:
400 V
Maximum Base Emitter Saturation Voltage:
2.5 V
Maximum Collector Cut-off Current:
20µA
Height:
15mm
Width:
4.5mm
Length:
10mm
Package Type:
TO-220SIS
Number of Elements per Chip:
2
Maximum Collector Emitter Saturation Voltage:
2 V
Maximum Emitter Base Voltage:
5 V
Configuration:
Single
Base Current:
1A
Pin Count:
3
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This is Dual NPN Darlington Pair 6 A 400 V HFE:100 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TTD1409B,S4X(S. The product has a maximum 6 a continuous collector current . It features up to 100 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 10 x 4.5 x 15mm. The product is available in through hole configuration. Provides up to 25 w @ 25 °c maximum power dissipation. It has a maximum operating temperature of +150 °c. Additionally, it has 600 v maximum collector base voltage. Whereas features a 400 v of collector emitter voltage (max). In addition, the product has a maximum 2.5 v base emitter saturation voltage . It has a maximum 20µa collector cut-off current . In addition, the height is 15mm. Furthermore, the product is 4.5mm wide. Its accurate length is 10mm. The package is a sort of to-220sis. It consists of 2 elements per chip. The product has a maximum 2 v collector emitter saturation voltage . It features a 5 v of maximum emitter base voltage. The product is available in single configuration. With 1a of base current . It contains 3 pins.

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TTD1409B NPN Darlington Transistor Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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