Dimensions:
3.04 x 1.4 x 1.01mm
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Collector Cut-off Current:
100nA
Width:
1.4mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
300 mA
Package Type:
SOT-23
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
30 V
Maximum Base Emitter Saturation Voltage:
1.5 V
Maximum Emitter Base Voltage:
10 V
Length:
3.04mm
Pin Count:
3
Minimum DC Current Gain:
5000
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Voltage:
30 V
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
This is ON Semi Dual NPN Darlington Pair 300 mA 30 V HFE:5000 3-Pin SOT-23 manufactured by ON Semiconductor. The manufacturer part number is MMBTA13LT3G. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product has a maximum 1.5 v collector emitter saturation voltage . It has a maximum 100na collector cut-off current . Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. The product has a maximum 300 ma continuous collector current . The package is a sort of sot-23. It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 30 v maximum collector base voltage. In addition, the product has a maximum 1.5 v base emitter saturation voltage . It features a 10 v of maximum emitter base voltage. Its accurate length is 3.04mm. It contains 3 pins. It features up to 5000 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. Whereas features a 30 v of collector emitter voltage (max). In addition, the height is 1.01mm. Whereas, the minimum operating temperature of the product is -55 °c.
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