Minimum DC Current Gain:
1000
Transistor Type:
NPN
Maximum Collector Base Voltage:
100 V
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1 W
Maximum Continuous Collector Current:
1.5 A
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Collector Cut-off Current:
0.2µA
Maximum Emitter Base Voltage:
12 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Base Part Number:
NZT70
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 1.5A 200MHz 1W Surface Mount SOT-223-4
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 1A, 5V
Transistor Type:
NPN - Darlington
Frequency - Transition:
200MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
Supplier Device Package:
SOT-223-4
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-261-4, TO-261AA
Current - Collector (Ic) (Max):
1.5A
Current - Collector Cutoff (Max):
200nA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is NZT7053. It features up to 1000 of minimum DC current gain. The transistor is a npn type. Additionally, it has 100 v maximum collector base voltage. The product is available in surface mount configuration. Provides up to 1 w maximum power dissipation. The product has a maximum 1.5 a continuous collector current . Whereas features a 100 v of collector emitter voltage (max). In addition, the product has a maximum 2 v base emitter saturation voltage . It has a maximum 0.2µa collector cut-off current . It features a 12 v of maximum emitter base voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 1.5 v collector emitter saturation voltage . It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration. Base Part Number: nzt70. It features bipolar (bjt) transistor npn - darlington 100v 1.5a 200mhz 1w surface mount sot-223-4. Furthermore, 1000 @ 1a, 5v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 200mhz. The 1.5v @ 100µa, 100ma is the maximum Vce saturation. sot-223-4 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-261-4, to-261aa. The maximum collector current includes 1.5a. In addition, 200na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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