Minimum DC Current Gain:
100
Transistor Type:
NPN
Dimensions:
6.73 x 6.22 x 2.38mm
Mounting Type:
Surface Mount
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
8 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4.5 V
Maximum Collector Cut-off Current:
0.01mA
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
48 Weeks
Base Part Number:
MJD122
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 4A, 4V
Transistor Type:
NPN - Darlington
Frequency - Transition:
4MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
4V @ 80mA, 8A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
10µA
Manufacturer:
ON Semiconductor
