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Vceo50V,Ic0.15A,Vce(sat)0.25V,hfe200to40

2SC2712-GR-F- Vceo50V,Ic0.15A,Vce(sat)0.25V,hfe200to40
2SC2712-GR(F)
2SC2712-GR(F)
Toshiba

Product Information

Minimum DC Current Gain:
70
Transistor Type:
NPN
Dimensions:
1.1 x 2.9 x 1.5mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 mW
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
50 V
Maximum Operating Frequency:
80 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
SOT-346 (SC-59)
Number of Elements per Chip:
1
Maximum DC Collector Current:
150 mA
Maximum Operating Temperature:
+125 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is Vceo50VIc0.15AVce(sat)0.25Vhfe200to40 manufactured by Toshiba. The manufacturer part number is 2SC2712-GR(F). It features up to 70 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 1.1 x 2.9 x 1.5mm. The product is available in surface mount configuration. Provides up to 150 mw maximum power dissipation. Additionally, it has 60 v maximum collector base voltage. Whereas features a 50 v of collector emitter voltage (max). It carries 80 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of sot-346 (sc-59). It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 150 ma. It has a maximum operating temperature of +125 °c. It contains 3 pins. The product offers single transistor configuration.

pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
NPN Bipolar Transistor Datasheet(Technical Reference)

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