Mounting Type:
Panel Mount
Diode Technology:
Silicon Junction
Peak Reverse Recovery Time:
120ns
Peak Non-Repetitive Forward Surge Current:
800A
Maximum Forward Voltage Drop:
1.2V
Maximum Continuous Forward Current:
120A
Rectifier Type:
General Purpose
Package Type:
ISOTOP
Number of Elements per Chip:
2
Diode Type:
Rectifier
Diode Configuration:
Isolated
Pin Count:
4
Peak Reverse Repetitive Voltage:
600V
HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
ISOTOP
Diode Configuration:
2 Independent
Reverse Recovery Time (trr):
120 ns
Operating Temperature - Junction:
150°C (Max)
REACH Status:
REACH Unaffected
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If:
1.55 V @ 100 A
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
600 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
120A
standardLeadTime:
25 Weeks
Current - Reverse Leakage @ Vr:
100 µA @ 600 V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
ISOTOP®
Technology:
Standard
Base Product Number:
STTH200
ECCN:
EAR99
The STMicroelectronics STTH200L06TV1 Diode Array is an advanced semiconductor component that combines high performance and dependability. Its advanced features and unique specifications make it excellent for various industrial-grade applications. Engineers and designers can use its outstanding attributes to optimise their systems and acquire reliable and efficient operation. With STMicroelectronics' reputation for quality, this diode array is a valuable component for varied applications.
Key Features, Benefits, and Potential Uses of The STTH200L06TV1 From STMicroelectronics:
The STTH200L06TV1 diode array boasts exceptional performance characteristics. It offers a low forward voltage drop and a high surge current capability, making it suitable for demanding applications. With a high repetitive peak reverse voltage and a low leakage current, this diode array ensures efficient and reliable operation.
Designed with efficiency in mind, the STTH200L06TV1 diode array provides low conduction and switching losses. This reduces power dissipation, making it an excellent choice for energy-efficient designs. The diode array also features a fast recovery time, contributing to overall system efficiency.
One of the notable features of the STTH200L06TV1 diode array is its robust protection capabilities. It offers excellent transient voltage suppression, safeguarding sensitive components from voltage spikes and transients. This protection mechanism helps prevent damage to the circuitry, ensuring the reliability and longevity of the system.
STMicroelectronics is renowned for producing high-quality semiconductor devices, and the STTH200L06TV1 diode array is no exception. Built with robust materials and advanced manufacturing processes, this diode array exhibits excellent reliability and durability. It operates seamlessly in various environmental conditions, ensuring long-term performance and minimising maintenance requirements.
The versatile nature of the STTH200L06TV1 allows it to be utilised in diverse applications. Its high-temperature range and closed-packed form factor make it qualified for space-constrained designs. It is notably well-suited for power factor correction (PFC), snubber circuits, freewheeling diodes, and more.
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