Minimum DC Current Gain:
81
Transistor Type:
NPN
Maximum Collector Base Voltage:
120 V
Mounting Type:
Through Hole
Maximum Power Dissipation:
0.75 W
Maximum Collector Emitter Saturation Voltage:
0.3 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
160 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1 A
HTSUS:
8542.39.0001
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 2V
Frequency - Transition:
160MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max):
60 V
Transistor Type:
NPN
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
750 mW
ECCN:
EAR99
