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Flash Memory


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Cypress Semiconductor
Rohs Verified
S29AL008J70BFI020, Cypress Semiconductor
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338 +
£ 0.67
Cypress Semiconductor
Rohs Verified
S29GL256P10FFI010, Cypress Semiconductor
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180 +
£ 5.04
Cypress Semiconductor
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S25FL128SAGBHIA00, Cypress Semiconductor
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338 +
£ 1.95
Cypress Semiconductor
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S29AL016J70BFI010, Cypress Semiconductor
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338 +
£ 0.80
Cypress Semiconductor
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S25FL128SAGMFIR01, Cypress Semiconductor
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47 +
£ 2.05
235 +
£ 2.01
Alliance Memory
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JS28F128P33BF70A, Alliance Memory
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96 +
£ 4.53
192 +
£ 4.07
288 +
£ 3.93
Cypress Semiconductor
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S29GL128P11TFI010, Cypress Semiconductor
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91 +
£ 3.66
Cypress Semiconductor
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S29JL032J70TFI320, Cypress Semiconductor
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96 +
£ 2.56
Cypress Semiconductor
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S25FL127SABNFI100, Cypress Semiconductor
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490 +
£ 1.77
Cypress Semiconductor
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S29GL256S90DHI010, Cypress Semiconductor
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260 +
£ 3.82
Cypress Semiconductor
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S70FL01GSAGBHIC10, Cypress Semiconductor
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338 +
£ 6.78
676 +
£ 6.62
Cypress Semiconductor
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S29GL256P90TFIR20, Cypress Semiconductor
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91 +
£ 5.40
Cypress Semiconductor
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S70GL02GS12FHIV10, Cypress Semiconductor
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180 +
£ 15.56
Cypress Semiconductor
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S25FL064P0XMFA000, Cypress Semiconductor
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240 +
£ 1.86
Cypress Semiconductor
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S25FL064LABMFM010, Cypress Semiconductor
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280 +
£ 2.08
Cypress Semiconductor
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S25FL128LAGMFI000, Cypress Semiconductor
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240 +
£ 2.04
Cypress Semiconductor
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S29GL01GS11FHI010, Cypress Semiconductor
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180 +
£ 6.30
Cypress Semiconductor
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S29GL512S10DHI020, Cypress Semiconductor
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260 +
£ 4.54
Cypress Semiconductor
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S34ML08G201TFI000, Cypress Semiconductor
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96 +
£ 7.91
Cypress Semiconductor
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S70GL02GS12FHIV20, Cypress Semiconductor
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180 +
£ 12.64
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SST39VF3202C-70-4I-EKE, Microchip
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96 +
£ 0.97
Cypress Semiconductor
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S29GL01GT10TFI010, Cypress Semiconductor
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91 +
£ 8.57
Cypress Semiconductor
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S29GL512T10FHI020, Cypress Semiconductor
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180 +
£ 5.00
Cypress Semiconductor
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S29GL128S10DHI010, Cypress Semiconductor
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260 +
£ 2.62
Cypress Semiconductor
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S25FL128SAGMFMG00, Cypress Semiconductor
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240 +
£ 3.42
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New Items
New items
S29GL064N90TFI070, Cypress Semiconductor

S29GL064N90TFI070, Cypress Semiconductor

Flash Memory using MirrorBit Technology, Cypress Semiconductor (Spansion) Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
New items
VA001-16G, Okdo

VA001-16G, Okdo

16GB Plug on eMMC 5.1 flash storage module for ROCK single board computers. Benefits of the eMMC flash storage module for ROCK Ideal memory solution for ROCK single board computers - eMMC modules benefit from fast speeds and supreme power efficiency. It’s the perfect memory and storage solution for a huge range of electronics. Not just for ROCK - This eMMC 5.1 module is optimised for use with ROCK single board computers, but it is also compatible with ODroid, and PINE. A memory size to suit you - We also offer eMMC 5.1 modules in 32GB, 64GB, or 128GB.
New items
SST39LF800A-55-4C-B3KE, Microchip

SST39LF800A-55-4C-B3KE, Microchip

SST39LF800A Parallel SuperFlash® Memory Flash Memory, Microchip
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S25FL256LAGNFV010, Infineon

S25FL256LAGNFV010, Infineon

The Infineon Flash Memory offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. It provides an ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly and storing reprogrammable data. Pb free package Double data rate option Quad peripheral interface option Minimum 20 year data retention Clock polarity and phase modes 0 and 3 Minimum 100000 program and erase cycles
New items
S25FL512SAGBHIA13, Infineon

S25FL512SAGBHIA13, Infineon

The Infineon Flash Memory offers high densities coupled with the flexibility and fast performance required by a variety of embedded applications. It is ideal for code shadowing, XIP, and data storage. Executing code directly from flash memory is often called Execute in Place or XIP. By using FL S devices at the higher clock rates supported, with QIO or DDR QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. Pb free package SPI with multi IO Advance sector protection Minimum 20 year data retention CMOS 3.0 V core with versatile IO Minimum 100000 program and erase cycles
New items
S29AL008J70TFI010, Cypress Semiconductor

S29AL008J70TFI010, Cypress Semiconductor

Parallel NOR Flash Memory, Cypress Semiconductor High performance Fast random-access and high bandwidth Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
New items
S26HS512TGABHI010, Cypress Semiconductor

S26HS512TGABHI010, Cypress Semiconductor

Cypress NOR Flash Memory is a non-volatile storage solution that integrates safety features for automotive and industrial systems. Applications include automotive instrument clusters, advanced driver assistance systems (ADAS), and networking communications. EnduraFlex™ Architecture: Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance, JEDEC xSPI compatible, Data Integrity Check and Interface CRC Certificates: ISO 26262 ASIL B Compliant, ISO 26262 ASIL-D ready. FMEDA and safety manual Single error correction and double error detection (SECDED) SafeBoot
New items
W25Q64JVZPIQ/TUBE, Winbond

W25Q64JVZPIQ/TUBE, Winbond

64M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI Single/Dual/Quad SPI operations Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 32,768 pages (256 bytes), page program in 0.7mS (typ.) Continuous Read with 8/16/32/64 Byte Wrap Clock operation up to 104MHz (266/532MHz equivalent with Dual/Quad SPI) 2.7 to 3.6V power supply -40° to +85°C operating range Program/Erase Suspend/Resume, Suspend Status Bit Factory-programmed unique ID Electronic ID with Dual/Quad I/O, Hardware and software write protection for top or bottom blocks Volatile & Non-volatile Status Register Bits Lock-Down and OTP protection Serial Flash Discoverable Parameters(SFDP) 3X256byte Security Registers with OTP locks Complement Array Protection Bit Individual Block/Sector Write Protection Software Reset & Configurable hardware/RESET pin Programmable output driver strength
New items
SST39SF040-55-4I-NHE, Microchip

SST39SF040-55-4I-NHE, Microchip

SST39SF010A/020A/040 Parallel SuperFlash® Memory The SST39SF010A/020A/040 family of devices from Microchip are Parallel multi-purpose SuperFlash® Memory ICs. Features 4.5-5.5V Read and Write Operations Endurance – 100,000 cycles (typical) Low Power Consumption - Active Current 10 mA, Standby Current 30 μA (typical values at 14 MHz) Sector-Erase Capability – Uniform 4 Kbyte sectors Read Access Time – 55 to 70 ns Sector-Erase Time 18 ms Chip-Erase Time: 70 ms (typical) Byte-Program Time – 14 μs (typical) Chip Rewrite Time – SST39SF010A 2 seconds, SST39SF020A 4 seconds, SST39SF040 8 seconds (typical values) Latched Address and Data Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polling TTL I/O Compatibility JEDEC Standard– Flash EEPROM Pinouts and Command Sets Flash Memory, Microchip
New items
S25HS512TFABHI010, Infineon

S25HS512TFABHI010, Infineon

Cypress NOR Flash Memory is a non-volatile storage solution that integrates safety features for automotive and industrial systems. Applications include automotive instrument clusters, advanced driver assistance systems (ADAS), and networking communications. EnduraFlex™ Architecture: Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance, JEDEC xSPI compatible, Data Integrity Check and Interface CRC Certificates: ISO 26262 ASIL B Compliant, ISO 26262 ASIL-D ready. FMEDA and safety manual Single error correction and double error detection (SECDED) SafeBoot
New items
S29GL256S10TFIV20, Infineon

S29GL256S10TFIV20, Infineon

CMOS 3.0 Volt Core with Versatile I/O 65 nm MirrorBit Eclipse Technology Single supply (VCC) for read / program / erase (2.7 V to 3.6 V) Versatile I/O Feature Wide I/O voltage range (VIO): 1.65 V to VCC ´ 16 data bus Asynchronous 32-byte Page read 512-byte Programming Buffer Programming in Page multiples, up to a maximum of 512 bytes Single word and multiple program on same word options Automatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correction Sector Erase Uniform 128-kbyte sectors Suspend and Resume commands for Program and Erase operations Status Register, Data Polling, and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP) Volatile and non-volatile protection methods for each sector Separate 1024-byte One Time Program (OTP) array with two lockable regions Common Flash Interface (CFI) parameter table Temperature Range / Grade Industrial (-40°C to +85°C) Industrial Plus(-40°C to +105°C) 100,000 Program / Erase Cycles 20 Years Data Retention Packaging Options 56-pin TSOP 64-ball LAA Fortified BGA, 13 mm ´ 11 mm 64-ball LAE Fortified BGA, 9 mm ´ 9 mm 56-ball VBU Fortified BGA, 9 mm ´ 7 mm
New items
S25FL256SAGBHBA00, Infineon

S25FL256SAGBHBA00, Infineon

This family of devices connect to a host system via a SPI. Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple width interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for DDR read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. The S25FL128S and S25FL256S products offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
FAQs
We offer free shipping for orders over £200 if delivery is in the UK. All other orders in the UK, shipping from £7.99 depending on the weight and measurement. Mainland Europe shipping charges start from £25. For all other countries shipping charges start from £50 for products like Flash Memory and all others.
You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding Flash Memory or any other product.
This depends on the Flash Memory individual product and information that can be found on our website.
Yes, we offer special discounts on orders above £200 for Flash Memory and all other products.
UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including Flash Memory.
Yes. We keep updating our stock frequently and if a product like Flash Memory is not in stock then we will let you know.