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Yes. We keep updating our stock frequently and if a product like Schottky Diodes & Rectifiers is not in stock then we will let you know.

Schottky Diodes & Rectifiers Are Available Online With Efficient Delivery

New items

RBR3LAM40CTR, ROHM

Schottky Barrier Diodes, 1A to 30A, ROHM Diodes and Rectifiers, ROHM Semiconductor

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1N5406-E3/54, Vishay

Standard Recovery Rectifiers, 2A to 10A Versatile and high-efficiency Standard Recovery Power Diodes in industry-standard package styles. Diodes and Rectifiers, Vishay Semiconductor

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New items

High Performance Schottky Rectifiers, 1A to 1.5A, Vishay Semiconductor A range of Schottky Rectifiers from Vishay Semiconductor. These diodes exhibit very low forward voltage drop with a very fast switching action. The reverse recovery times of Schottky diodes are extremely short and they are suitable for applications requiring fast switching and low power loss. Schottky Rectifiers, Vishay Semiconductor

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New items

AS1PDHM3/84A, Vishay

Automotive Standard Avalanche Rectifiers, 1.5A A range of automotive-quality surface-mount standard avalanche diodes. Qualified to AEC-Q101. RS Product Codes 815-1042 AS1PDHM3/84A Avalanche diode, 1.5A, 200V, DO-220AA 815-1055 AS1PGHM3/84A Avalanche diode, 1.5A, 400V, DO-220AA 815-1058 AS1PKHM3/84A Avalanche diode, 1.5A, 800V, DO-220AA 815-1052 AS1PMHM3/84A Avalanche diode, 1.5A, 1000V, DO-220AA Approvals AEC-Q101 Diodes and Rectifiers, Vishay Semiconductor

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New items

PMEG060V030EPDZ, Nexperia

60 V, 3 A low VF MEGA Schottky barrier rectifier, Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package. Average forward current: IF(AV) ≤ 3 A Reverse voltage: VR ≤ 60 V Extremely low forward voltage High power capability due to clip-bonding technology and heat sink Small and thin SMD power plastic package, typical height 0.78 mm AEC-Q101 qualified Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Freewheeling application Reverse polarity protection Low power consumption application

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New items

BAS86,115, Nexperia

Schottky Barrier Diodes, 200mA to 500mA, Nexperia High efficiency Ultra-small, low-profile surface-mount packages Optimized for Low forward voltage drop and high junction temperature Low capacitance Negligible power switching losses Low leakage current Diodes and Rectifiers, Nexperia

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New items

V15P45-M3/86A, Vishay

TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds. Features Patented Trench Structure Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters High power density and low forward voltage Schottky Rectifiers, Vishay Semiconductor

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New items

VS-1N1184RA, Vishay

Standard Recovery Rectifiers, 11A to 40A Versatile and high-efficiency Standard Recovery Power Diodes in industry-standard package styles. Diodes and Rectifiers, Vishay Semiconductor

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New items

PMEG100T20ELXDX, Nexperia

The Nexperia trench schottky barrier rectifier encapsulated in a CFP2-HP power flat lead surface mounted device plastic package. High power capability due to clip-bonding technology Power flat lead plastic package with exposed heatsink

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New items

MUR420, Taiwan Semiconductor

Rectifier Diodes, 3A to 4A, Taiwan Semiconductor

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New items

SS16L, Taiwan Semiconductor

Schottky Barrier Diodes, up to 1A, Taiwan Semiconductor Low power loss Low foward voltage drop High current capability

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New items

IDW40G65C5BXKSA2, Infineon

The Infineon ThinQ generation 5 represents leading edge technology for the SiC Schottky barrier diodes. Thanks to the more compact design and thin wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ Generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range. Benchmark switching behaviour No reverse recovery/ No forward recovery Temperature independent switching behaviour High surge current capability Higher system reliability due to lower operating temperatures Reduced EMI

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