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RF Amplifiers ICs Available With Overnight Delivery

New items

RA81F1427STGNM#BD0, Renesas Electronics

The Renesas Electronics Driver Amplifiers has 100 ohm DIFF input impedances and 50 ohm SE output impedances. The amplifier are key components for radio cards of various architectures. A versatile high performance amplifier with low power consumption will be critical to enabling the design of massive MIMO solutions for 5G wireless systems and other RF applications such as Wi Fi connectivity, radar and test and measurement. 35 dB gain 2.3 to 4.2 GHz frequency Noise figure and linearity 3 x 3 mm package with 16 pin

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SMA3117-TL-H, onsemi

RF Amplifiers, ON Semiconductor MMIC (Monolithic Microwave Integrated Circuit) Wideband RF amplifiers from ON Semiconductor, suitable for operation up to several GHz.

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MAX3969ETP+, Maxim Integrated

IC AMP LIMIT 200MBPS 20-TQFN

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BGA855N6E6327XTSA1, Infineon

The Infineon low noise amplifier is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands. The high linearity performance of BGA855N6 ensures best sensitivity for the operation in 4G & 5G NSA configurations. High linearity performance IIP3 of 0 dBm Low current consumption of 4.8 mA Ultra small TSNP-6-10 leadless package RF output internally matched to 50 Ohm Only one external matching component needed

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BGB707L7ESDE6327XTSA1, Infineon

The Infineon LNA MMIC with integrated ESD protection and active biasing is a high performance low noise amplifier MMIC based on Infineons silicon germanium carbon bipolar technology. Integrated ESD protection of 2 kV HBM at all pins

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ADL5545ARKZ-R7, Analog Devices

RF Amplifiers, Analog Devices Radio Frequency (RF) Amplifiers, Analog Devices

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NJG1159PHH-TE1, New Japan Radio

The New Japan Radio front end module is designed for GNSS including GPS, GLONASS, BeiDou, and Galileo applications. This front end module can operate from 1.5V to 3.3V single voltage in -40 to 105 °C. Low noise figure High linearity High out band rejection

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MAX3748HETE+, Maxim Integrated

SFP Reference Design Available 16-Pin TQFN Package with 3mm x 3mm Footprint Single 3.3V Supply Voltage 86ps Rise and Fall Time Loss of Signal with Programmable Threshold RSSI Interface (with MAX3744 TIA) Output Disable Polarity Select 8.7psP-P Deterministic Jitter (4.25Gbps) Applications Fibre Channel SFF/SFP Transceiver Modules Gigabit Ethernet SFF/SFP Transceiver Modules Multirate OC-3 to OC-48-FEC SFF/SFP Transceiver Modules

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BGB741L7ESDE6327XTSA1, Infineon

RF Amplifiers, Infineon Infineon s range of RF Low Noise Amplifier (LNA) covers MMIC, GPS, Gain and PCS as well as Broadband types and Glonass front end modules. The RF amplifiers feature low power consumption, high data-rate reception and may have ESD protection and are used in mobile devices. The GPS/GLONASS modules are widely used in Personal Navigation Devices (PND), Tablets, Cameras and mobile phones. Radio Frequency (RF) Amplifiers, Infineon

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BGA416E6327HTSA1, Infineon

RF Amplifiers, Infineon Infineon s range of RF Low Noise Amplifier (LNA) covers MMIC, GPS, Gain and PCS as well as Broadband types and Glonass front end modules. The RF amplifiers feature low power consumption, high data-rate reception and may have ESD protection and are used in mobile devices. The GPS/GLONASS modules are widely used in Personal Navigation Devices (PND), Tablets, Cameras and mobile phones. Radio Frequency (RF) Amplifiers, Infineon

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HMC960LP4E, Analog Devices

RF Amplifiers, Analog Devices Hittite Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers. Radio Frequency (RF) Amplifiers, Analog Devices

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