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Get Quality RF Amplifier ICs For Signal Boost

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BGA855N6E6327XTSA1, Infineon

The Infineon low noise amplifier is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands. The high linearity performance of BGA855N6 ensures best sensitivity for the operation in 4G & 5G NSA configurations. High linearity performance IIP3 of 0 dBm Low current consumption of 4.8 mA Ultra small TSNP-6-10 leadless package RF output internally matched to 50 Ohm Only one external matching component needed

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BGB707L7ESDE6327XTSA1, Infineon

The Infineon LNA MMIC with integrated ESD protection and active biasing is a high performance low noise amplifier MMIC based on Infineons silicon germanium carbon bipolar technology. Integrated ESD protection of 2 kV HBM at all pins

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MAX3969ETP+, Maxim Integrated

IC AMP LIMIT 200MBPS 20-TQFN

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RA81F1427STGNM#BD0, Renesas Electronics

The Renesas Electronics Driver Amplifiers has 100 ohm DIFF input impedances and 50 ohm SE output impedances. The amplifier are key components for radio cards of various architectures. A versatile high performance amplifier with low power consumption will be critical to enabling the design of massive MIMO solutions for 5G wireless systems and other RF applications such as Wi Fi connectivity, radar and test and measurement. 35 dB gain 2.3 to 4.2 GHz frequency Noise figure and linearity 3 x 3 mm package with 16 pin

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BGB741L7ESDE6327XTSA1, Infineon

RF Amplifiers, Infineon Infineon s range of RF Low Noise Amplifier (LNA) covers MMIC, GPS, Gain and PCS as well as Broadband types and Glonass front end modules. The RF amplifiers feature low power consumption, high data-rate reception and may have ESD protection and are used in mobile devices. The GPS/GLONASS modules are widely used in Personal Navigation Devices (PND), Tablets, Cameras and mobile phones. Radio Frequency (RF) Amplifiers, Infineon

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BGA7M1N6E6327XTSA1, Infineon

The Infineon RF Amplifier is a front end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2200 MHz. The LNA provides 13.0 dB gain and 0. 60 dB noise figure at a current consumption of 4.4 mA. This RF amplifier is base on Silicon Germanium technology. It operates from 1.5 V to 3.3 V supply voltage. Pb free package RoHS compliant Low noise figure Digitally on off switch Low current consumption Only 1 external SMD component necessary

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BGA5H1BN6E6327XTSA1, Infineon

The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption. Low current consumption of 8.5 mA Multi-state control: Bypass- and high gain-Mode Ultra small TSNP-6-10 leadless package RF output internally matched to 50 Ohm Low external component count

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BGA125N6E6327XTSA1, Infineon

The Infineon BGA125N6 is low noise amplifier designed to enhance GNSS signal sensitivity for band L2/L5 especially in wearables and mobile cellular IoT applications. With the very good performance it ensures high system sensitivity. The ultra low power consumption of 1.5mW preserves valuable battery power, ideal for small battery powered GNSS devices. Peration frequencies is 1164 to 1300 MHz Ultra low current consumption is 1.3 mA Wide supply voltage range is 1.1 V to 3.3 V High insertion power gain is 20.0 dB

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BGA123L4E6327XTSA1, Infineon

The Infineon small footprint ultra low current low noise amplifier is designed to enhance GNSS signal sensitivity especially in wearables and mobile cellular IoT devices. With 18.2 dB gain and only 0.75 dB noise figure it ensures high system sensitivity. The current needed is only 1.1 mA which means just 1.3 mW power consumption, which is critical to help to conserve batteries. The wide supply voltage range of 1.1 V to 3.6 V ensures flexible design and high compatibility. Ultra low current consumption of 1.1 mA Wide supply voltage range of 1.1 V to 3.6 V High insertion power gain of 18.2 dB Low noise figure of 0.75 dB 2 kV HBM ESD protection

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HMC374SC70E, Analog Devices

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SST11CP16-QXCE, Microchip

SST11CP16 5.1-5.9 GHz WLAN 802.11a/n/ac Power Amplifier Radio Frequency (RF) Amplifiers, Microchip

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NJG1159PHH-TE1, Nisshinbo Micro Devices

The New Japan Radio front end module is designed for GNSS including GPS, GLONASS, BeiDou, and Galileo applications. This front end module can operate from 1.5V to 3.3V single voltage in -40 to 105 °C. Low noise figure High linearity High out band rejection

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