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Manufacturer : Fuji Electric
Manufacturer Part No : 2MBi75VA-120-50
Enrgtech Part No : ET10003209
Product Range : PolySwitch RXEF Series

Fuji Electric 2MBi75VA-120-50, M263 Series IGBT Module, 75 A max, 1200 V, Panel Mount

IGBT Modules 2-Pack, Fuji Electric V-Series, 6th Generation Field-Stop U/U4 Series, 5th Generation Field-Stop S-Series, 4th Generation NPT IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Product Information

Configuration : Series
Dimensions : 94 x 34 x 30mm
Mounting Type : Panel Mount
Maximum Power Dissipation : 390 W
Maximum Continuous Collector Current : 75 A
Maximum Collector Emitter Voltage : 1200 V
Height : 30mm
Width : 34mm
Length : 94mm
Maximum Gate Emitter Voltage : ±20V
Package Type : M263
Channel Type : N
Maximum Operating Temperature : +150 °C
Pin Count : 7
rohs : RoHS Certificate of Compliance
Transistor Configuration : Series

Technical Documents

  • 2MBI75VA-120-50, IGBT Module (V Series) 1200V 75A 2-in-1 Package (Technical Reference)
  • ESD Control Selection Guide V1 (Technical Reference)

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