Diameter:
5.3mm
Mounting Type:
Through Hole
Maximum Operating Temperature:
+150 °C
Maximum Forward Voltage Drop:
1V
Height:
9.5mm
Diode Technology:
Silicon Junction
Package Type:
DO-41
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Diode Configuration:
Single
Pin Count:
2
Manufacturer Standard Lead Time:
9 Weeks
Base Part Number:
1N5400
Detailed Description:
Diode Standard 50V 3A Through Hole DO-201AD
Current - Reverse Leakage @ Vr:
10µA @ 50V
Operating Temperature - Junction:
-65°C ~ 150°C
Mounting Type:
Through Hole
Voltage - DC Reverse (Vr) (Max):
50V
Voltage - Forward (Vf) (Max) @ If:
1V @ 3A
Supplier Device Package:
DO-201AD
Packaging:
Cut Tape (CT)
Customer Reference:
Current - Average Rectified (Io):
3A
Package / Case:
DO-201AA, DO-27, Axial
Diode Type:
Standard
Speed:
Standard Recovery >500ns, > 200mA (Io)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is 1N5400RLG. Its diameter is 5.3mm. The product is available in through hole configuration. It has a maximum operating temperature of +150 °c. It features 1v of maximum forward voltage drop. In addition, the height is 9.5mm. The product utilizes silicon junction diode technology. The package is a sort of do-41. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The diode features a single configuration. It contains 2 pins. It has typical 9 weeks of manufacturer standard lead time. Base Part Number: 1n5400. It features diode standard 50v 3a through hole do-201ad. 10µa @ 50v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -65°c ~ 150°c. While it has maximum reverse voltage of 50v. The product has a maximum forward voltage of 1v @ 3a. do-201ad is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It features a 3a of average rectified current. Moreover, the product comes in do-201aa, do-27, axial. It is designed with a standard diode. It has a robust speed of standard recovery >500ns, > 200ma (io). The on semiconductor's product offers user-desired applications.
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