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Toshiba Semiconductor and Storage GT50JR22(STA1,E,S)

GT50JR22-STA1-E-S- Toshiba Semiconductor and Storage GT50JR22(STA1,E,S)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
50 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
-
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max):
600 V
Td (on/off) @ 25°C:
-
Operating Temperature:
175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
REACH Status:
REACH Unaffected
Test Condition:
-
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
IGBT Type:
-
Current - Collector Pulsed (Icm):
100 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(N)
Power - Max:
230 W
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is GT50JR22(STA1,E,S). The maximum collector current includes 50 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.2v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 600 v. The product has 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. In addition, it is reach unaffected. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3p(n) is the supplier device package value. The maximum power of the product is 230 w. The product is designated with the ear99 code number.

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You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage GT50JR22(STA1,E,S). You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage GT50JR22(STA1,E,S).
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