Toshiba Semiconductor and Storage GT50JR22(STA1,E,S)

GT50JR22-STA1-E-S- Toshiba Semiconductor and Storage GT50JR22(STA1,E,S)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
50 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max):
600 V
Td (on/off) @ 25°C:
-
Operating Temperature:
175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
title:
GT50JR22(STA1,E,S)
REACH Status:
REACH Unaffected
Switching Energy:
-
Test Condition:
-
Manufacturer:
Toshiba Semiconductor and Storage
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
IGBT Type:
-
Current - Collector Pulsed (Icm):
100 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(N)
Packaging:
Tube
Power - Max:
230 W
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is GT50JR22(STA1,E,S). The maximum collector current includes 50 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.2v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 600 v. The product has 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. In addition, it is reach unaffected. The toshiba semiconductor and storage's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3p(n) is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 230 w. The product is designated with the ear99 code number.

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