Toshiba Semiconductor and Storage GT40WR21,Q

GT40WR21-Q Toshiba Semiconductor and Storage GT40WR21,Q
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
40 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
5.9V @ 15V, 40A
Td (on/off) @ 25°C:
-
Operating Temperature:
175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
title:
GT40WR21,Q
Voltage - Collector Emitter Breakdown (Max):
1350 V
Switching Energy:
-
Test Condition:
-
Manufacturer:
Toshiba Semiconductor and Storage
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
18 Weeks
IGBT Type:
-
Current - Collector Pulsed (Icm):
80 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(N)
Packaging:
Tray
Power - Max:
375 W
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is GT40WR21,Q. The maximum collector current includes 40 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 5.9v @ 15v, 40a. The product has 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. The maximum collector emitter breakdown voltage of the product is 1350 v. The toshiba semiconductor and storage's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). It has a long 18 weeks standard lead time. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3p(n) is the supplier device package value. In addition, tray is the available packaging type of the product. The maximum power of the product is 375 w. The product is designated with the ear99 code number.

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FAQs

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