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This is manufactured by onsemi. The manufacturer part number is FGHL50T65MQDT. Provides up to 268 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 30 transistors . The product has a maximum 80 a continuous collector current . It offers a maximum 20v gate emitter voltage . The package is a sort of to-247-3l. The maximum collector current includes 80 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 1.8v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 21ns/90ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 99 nc gate charge. It has a trr (reverse recovery time) of 79 ns. In addition, it is reach unaffected. Provide switching energy up to 1.19mj (on), 630µj (off). Test condition included 400v, 50a, 6ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is not applicable. It has a long 24 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 268 w. The product is designated with the ear99 code number.
For more information please check the datasheets.
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