STMicroelectronics STGB30M65DF2
Product Information
Dimensions:
10.4 x 9.35 x 4.6mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
258 W
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Maximum Continuous Collector Current:
60 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
2490pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
2.03mJ
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
60 A
Reverse Recovery Time (trr):
140 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
300µJ (on), 960µJ (off)
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
31.6ns/115ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge:
80 nC
REACH Status:
REACH Unaffected
edacadModel:
STGB30M65DF2 Models
edacadModelUrl:
/en/models/5305264
Test Condition:
400V, 30A, 10Ohm, 15V
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
18 Weeks
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
120 A
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Power - Max:
258 W
Base Product Number:
STGB30
ECCN:
EAR99
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Yes. We ship STGB30M65DF2 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STGB30M65DF2. The given dimensions of the product include 10.4 x 9.35 x 4.6mm. The product is available in surface mount configuration. Provides up to 258 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak (to-263). Whereas, the minimum operating temperature of the product is -55 °c. It has approximately 2490pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 2.03mj energy rating . The product offers single transistor configuration. The maximum collector current includes 60 a. It has a trr (reverse recovery time) of 140 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 300µj (on), 960µj (off). Features 2v @ 15v, 30a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 31.6ns/115ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. Features 80 nc gate charge. In addition, it is reach unaffected. Test condition included 400v, 30a, 10ohm, 15v. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 18 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-263 (d2pak) is the supplier device package value. The maximum power of the product is 258 w. Moreover, it corresponds to stgb30, a base product number of the product. The product is designated with the ear99 code number.
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