This is manufactured by STMicroelectronics. The manufacturer part number is STGW25S120DF3. The given dimensions of the product include 15.75 x 5.15 x 20.15mm. The product is available in through hole configuration. Provides up to 375 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has approximately 1600pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 4.88mj energy rating . The product offers single transistor configuration. The maximum collector current includes 50 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 830µj (on), 2.37mj (off). Features 2.1v @ 15v, 25a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 31ns/147ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 80 nc gate charge. It has a trr (reverse recovery time) of 265 ns. In addition, it is reach unaffected. Test condition included 600v, 25a, 15ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. The maximum power of the product is 375 w. Moreover, it corresponds to stgw25, a base product number of the product. The product is designated with the ear99 code number.
STGW25S120DF3, STGWA25S120DF3 Trench Gate Field-Stop IGBT, S Series 1200V, 25A Low Drop(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
STGW(A)25S120DF3(Datasheets)
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This is manufactured by STMicroelectronics. The manufacturer part number is STGW25S120DF3. The given dimensions of the product include 15.75 x 5.15 x 20.15mm. The product is available in through hole configuration. Provides up to 375 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has approximately 1600pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 4.88mj energy rating . The product offers single transistor configuration. The maximum collector current includes 50 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 830µj (on), 2.37mj (off). Features 2.1v @ 15v, 25a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 31ns/147ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 80 nc gate charge. It has a trr (reverse recovery time) of 265 ns. In addition, it is reach unaffected. Test condition included 600v, 25a, 15ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. The maximum power of the product is 375 w. Moreover, it corresponds to stgw25, a base product number of the product. The product is designated with the ear99 code number.
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