This is manufactured by STMicroelectronics. The manufacturer part number is STGWT40H65FB. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 283 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3p. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 80 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 498mj (on), 363mj (off). Features 2.3v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 40ns/142ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 210 nc gate charge. In addition, it is reach unaffected. Test condition included 400v, 40a, 5ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3p is the supplier device package value. The maximum power of the product is 283 w. Moreover, it corresponds to stgwt40, a base product number of the product. The product is designated with the ear99 code number.
STGW40H65FB, STGFW40H65FB, STGWT40H65FB, Trench Gate Field-Stop IGBT, HB Series 650V, 40A High Speed(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
Mult Dev OBS 8/Mar/2019(PCN Obsolescence/ EOL)
STGW(T)40H65FB(Datasheets)
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This is manufactured by STMicroelectronics. The manufacturer part number is STGWT40H65FB. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 283 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3p. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 80 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 498mj (on), 363mj (off). Features 2.3v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 40ns/142ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 210 nc gate charge. In addition, it is reach unaffected. Test condition included 400v, 40a, 5ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3p is the supplier device package value. The maximum power of the product is 283 w. Moreover, it corresponds to stgwt40, a base product number of the product. The product is designated with the ear99 code number.
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