Diameter:
2.7mm
Mounting Type:
Through Hole
Maximum Continuous Forward Current:
1A
Peak Non-Repetitive Forward Surge Current:
25A
Diode Technology:
Schottky
Package Type:
DO-41
Number of Elements per Chip:
1
Diode Type:
Schottky
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
50V
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MBR150
Detailed Description:
Diode Schottky 50V 1A Through Hole Axial
Current - Reverse Leakage @ Vr:
500µA @ 50V
Operating Temperature - Junction:
-65°C ~ 150°C
Mounting Type:
Through Hole
Voltage - DC Reverse (Vr) (Max):
50V
Voltage - Forward (Vf) (Max) @ If:
750mV @ 1A
Supplier Device Package:
Axial
Packaging:
Cut Tape (CT)
Customer Reference:
Current - Average Rectified (Io):
1A
Package / Case:
DO-204AL, DO-41, Axial
Diode Type:
Schottky
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is MBR150RLG. Its diameter is 2.7mm. The product is available in through hole configuration. Furthermore, its maximum continuous forward current constitutes 1a. Moreover, a bespoke product has 25a peak non-repetitive forward surge current. The product utilizes schottky diode technology. The package is a sort of do-41. It consists of 1 elements per chip. It is designed with a schottky diode. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 50v. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: mbr150. It features diode schottky 50v 1a through hole axial. 500µa @ 50v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -65°c ~ 150°c. While it has maximum reverse voltage of 50v. The product has a maximum forward voltage of 750mv @ 1a. axial is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It features a 1a of average rectified current. Moreover, the product comes in do-204al, do-41, axial. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The on semiconductor's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.