Rectifier diode,20ETF12 20A 1200V
Product Information
Dimensions:
8.89 x 10.54 x 4.7mm
Rectifier Type:
Switching
Diode Configuration:
Single
Peak Reverse Recovery Time:
400ns
Maximum Continuous Forward Current:
20A
Package Type:
TO-220AC
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Length:
10.54mm
Pin Count:
2
Width:
4.7mm
Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Peak Non-Repetitive Forward Surge Current:
355A
Maximum Forward Voltage Drop:
1.31V
Height:
8.89mm
Peak Reverse Current:
100µA
Peak Reverse Repetitive Voltage:
1200V
Minimum Operating Temperature:
-40 °C
Diode Type:
Silicon Junction
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FAQs
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You can order Vishay brand products with VS-20ETF12PBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Rectifier Diodes & Schottky Diodes category are shipped in lowest possible time.
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Yes. We ship VS-20ETF12PBF Internationally to many countries around the world.
This is Rectifier diode20ETF12 20A 1200V manufactured by Vishay. The manufacturer part number is VS-20ETF12PBF. The given dimensions of the product include 8.89 x 10.54 x 4.7mm. This switching product is highly suited for various professionals in various settings. The diode features a single configuration. Moreover, it has a peak reverse recovery time about 400ns . Furthermore, its maximum continuous forward current constitutes 20a. The package is a sort of to-220ac. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. Its accurate length is 10.54mm. It contains 2 pins. Furthermore, the product is 4.7mm wide. The product is available in through hole configuration. The product utilizes silicon junction diode technology. Moreover, a bespoke product has 355a peak non-repetitive forward surge current. It features 1.31v of maximum forward voltage drop. In addition, the height is 8.89mm. It has a typical 100µa peak reverse current . While having the peak reverse repetitive 1200v. Whereas, the minimum operating temperature of the product is -40 °c. It is designed with a silicon junction diode.
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