This is SiC Schottky Diode 650V 12A 2-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TRS12E65C,S1AQ(S. The product is available in through hole configuration. Furthermore, its maximum continuous forward current constitutes 12a. Moreover, a bespoke product has 60a peak non-repetitive forward surge current. It features 1.7v of maximum forward voltage drop. The product utilizes sic schottky diode technology. The package is a sort of to-220. It consists of 1 elements per chip. It is designed with a schottky diode. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 650v.
TRS12E65C, SiC Schottky Barrier Diode(Technical Reference)
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This is SiC Schottky Diode 650V 12A 2-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TRS12E65C,S1AQ(S. The product is available in through hole configuration. Furthermore, its maximum continuous forward current constitutes 12a. Moreover, a bespoke product has 60a peak non-repetitive forward surge current. It features 1.7v of maximum forward voltage drop. The product utilizes sic schottky diode technology. The package is a sort of to-220. It consists of 1 elements per chip. It is designed with a schottky diode. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 650v.
Reviews
Don’t hesitate to ask questions for better clarification.