Taiwan Semi FR105G-K R0G Fast Recovery Diode, 600V 1A, 2-Pin DO-41

FR105G-K-R0G Taiwan Semi FR105G-K R0G Fast Recovery Diode, 600V 1A, 2-Pin DO-41
Taiwan Semiconductor

Product Information

Diameter:
2.7mm
Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Peak Reverse Recovery Time:
250ns
Peak Non-Repetitive Forward Surge Current:
30A
Maximum Forward Voltage Drop:
1.2V
Maximum Continuous Forward Current:
1A
Rectifier Type:
Fast Recovery
Package Type:
DO-41
Number of Elements per Chip:
1
Diode Type:
Silicon Junction
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
600V
RoHs Compliant
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This is Taiwan Semi Fast Recovery Diode 600V 1A 2-Pin DO-41 manufactured by Taiwan Semiconductor. The manufacturer part number is FR105G-K R0G. Its diameter is 2.7mm. The product is available in through hole configuration. The product utilizes silicon junction diode technology. Moreover, it has a peak reverse recovery time about 250ns . Moreover, a bespoke product has 30a peak non-repetitive forward surge current. It features 1.2v of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 1a. This fast recovery product is highly suited for various professionals in various settings. The package is a sort of do-41. It consists of 1 elements per chip. It is designed with a silicon junction diode. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 600v.

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FR101 - FR107, 1A Fast Recovery Rectifiers Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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