Vishay VS-8EWF10S-M3 SMT Switching Diode, 1000V 8A, 3-Pin DPAK
Product Information
Dimensions:
2.39 x 6.73 x 6.22mm
Rectifier Type:
Switching
Diode Configuration:
Single
Peak Reverse Recovery Time:
270ns
Maximum Continuous Forward Current:
8A
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Length:
6.73mm
Pin Count:
3
Width:
6.22mm
Mounting Type:
Surface Mount
Diode Technology:
Silicon Junction
Peak Non-Repetitive Forward Surge Current:
200A
Maximum Forward Voltage Drop:
1.3V
Height:
2.39mm
Peak Reverse Current:
100µA
Peak Reverse Repetitive Voltage:
1000V
Minimum Operating Temperature:
-40 °C
Diode Type:
Silicon Junction
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FAQs
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Yes. Our products in Rectifier Diodes & Schottky Diodes category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay VS-8EWF10S-M3 SMT Switching Diode, 1000V 8A, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Vishay VS-8EWF10S-M3 SMT Switching Diode, 1000V 8A, 3-Pin DPAK.
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Yes. We ship VS-8EWF10S-M3 Internationally to many countries around the world.
This is SMT Switching Diode 1000V 8A 3-Pin DPAK manufactured by Vishay. The manufacturer part number is VS-8EWF10S-M3. The given dimensions of the product include 2.39 x 6.73 x 6.22mm. This switching product is highly suited for various professionals in various settings. The diode features a single configuration. Moreover, it has a peak reverse recovery time about 270ns . Furthermore, its maximum continuous forward current constitutes 8a. The package is a sort of dpak (to-252). It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. Its accurate length is 6.73mm. It contains 3 pins. Furthermore, the product is 6.22mm wide. The product is available in surface mount configuration. The product utilizes silicon junction diode technology. Moreover, a bespoke product has 200a peak non-repetitive forward surge current. It features 1.3v of maximum forward voltage drop. In addition, the height is 2.39mm. It has a typical 100µa peak reverse current . While having the peak reverse repetitive 1000v. Whereas, the minimum operating temperature of the product is -40 °c. It is designed with a silicon junction diode.
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