Taiwan Semi HER306G R0 Switching Diode, 600V 3A, 75ns, 2-Pin DO-201AD
Product Information
Dimensions:
5.6 x 9.5 x 5.6mm
Rectifier Type:
Switching
Diode Configuration:
Single
Peak Reverse Recovery Time:
75ns
Maximum Continuous Forward Current:
3A
Package Type:
DO-201AD
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Length:
9.5mm
Pin Count:
2
Width:
5.6mm
Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Peak Non-Repetitive Forward Surge Current:
125A
Maximum Forward Voltage Drop:
1.7V
Height:
5.6mm
Peak Reverse Current:
10µA
Peak Reverse Repetitive Voltage:
600V
Minimum Operating Temperature:
-65 °C
Diode Type:
Silicon Junction
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Yes. We ship HER306G R0 Internationally to many countries around the world.
This is Taiwan Semi Switching Diode 600V 3A 75ns 2-Pin DO-201AD manufactured by Taiwan Semiconductor. The manufacturer part number is HER306G R0. The given dimensions of the product include 5.6 x 9.5 x 5.6mm. This switching product is highly suited for various professionals in various settings. The diode features a single configuration. Moreover, it has a peak reverse recovery time about 75ns . Furthermore, its maximum continuous forward current constitutes 3a. The package is a sort of do-201ad. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. Its accurate length is 9.5mm. It contains 2 pins. Furthermore, the product is 5.6mm wide. The product is available in through hole configuration. The product utilizes silicon junction diode technology. Moreover, a bespoke product has 125a peak non-repetitive forward surge current. It features 1.7v of maximum forward voltage drop. In addition, the height is 5.6mm. It has a typical 10µa peak reverse current . While having the peak reverse repetitive 600v. Whereas, the minimum operating temperature of the product is -65 °c. It is designed with a silicon junction diode.
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