Deliver to
United Kingdom
The Infineon 2EDL05I06PFXUMA1 is a rugged, high-voltage half-bridge gate driver ideal for UK power electronics. Designed with advanced SOI (Silicon‑on‑Insulator) technology, this compact 8-pin DSO device delivers fast and efficient gate drive for MOSFETs and IGBTs. With ±500 mA peak current, 600 V bootstrap capability, and rapid switching times (rise ~48 ns, fall ~24 ns), it excels in demanding applications. Its low quiescent draw (~300 µA) and broad operating range (10–20 V) make it both energy-efficient and reliable.
The 2EDL05I06PFXUMA1 offers exceptional strength and compact design. Built on SOI technology, the IC withstands negative voltage transients and avoids latch‑up, essential for “no compromise” reliability in UK operational environments. Integrated bootstrap diode simplifies circuit design, while the dual-driver configuration reduces component count. Its fast switching and low standby current support efficient, high-frequency power conversion in tight PCBs, saving space and improving system robustness.
For more information please check the datasheets.
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