Deliver to
United Kingdom
The Infineon 2ED2182S06FXUMA1 is a rugged, high-speed gate driver IC engineered for efficient switching of IGBTs and MOSFETs in UK power electronics. Delivering ±2.5 A drive current with swift 15 ns rise/fall times, it supports voltages up to 650 V via a bootstrap configuration and integrates a fast low‑resistance bootstrap diode. Built on silicon‑on‑insulator (SOI) tech, it delivers top-tier robustness against negative transient voltages, ensuring reliable operation under harsh conditions. Encased in a compact 8‑pin DSO package, this gate driver is ideal for UK designs in industrial power, automotive inverters, renewable energy systems, and lighting control applications.
Opt for the 2ED2182S06FXUMA1 when reliability and performance under stress matter. Its SOI-based design ensures immunity to negative voltage spikes and eliminates latch-up, while the integrated bootstrap diode and fast pulse drive simplify external circuitry and boost efficiency. The 2.5 A drive strength paired with precise dead-time control enhances switching accuracy, making it a go-to choice for UK engineers tackling demanding switching tasks in compact form factors.
For more information please check the datasheets.
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