ON Semiconductor NSVMUN5132T1G

NSVMUN5132T1G ON Semiconductor
NSVMUN5132T1G
NSVMUN5132T1G
ON Semiconductor

Product Information

Automotive Standard:
AEC-Q101
Minimum DC Current Gain:
15
Transistor Type:
PNP
Dimensions:
2.2 x 1.35 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
310 mW
Maximum Continuous Collector Current:
100 mA
Maximum Collector Emitter Voltage:
50 V
Height:
0.9mm
Width:
1.35mm
Length:
2.2mm
Package Type:
SOT-323 (SC-70)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
0.25 V
Typical Resistor Ratio:
1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
4.7 kΩ
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
NSVMUN5132
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 202mW Surface Mount SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 5mA, 10V
Transistor Type:
PNP - Pre-Biased
Mounting Type:
Surface Mount
Resistor - Base (R1):
4.7 kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Supplier Device Package:
SC-70-3 (SOT323)
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
4.7 kOhms
Power - Max:
202mW
Customer Reference:
Package / Case:
SC-70, SOT-323
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NSVMUN5132T1G. The product complies with automotive standard - aec-q101. It features up to 15 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 2.2 x 1.35 x 0.9mm. The product is available in surface mount configuration. Provides up to 310 mw maximum power dissipation. The product has a maximum 100 ma continuous collector current . Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 0.9mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. The package is a sort of sot-323 (sc-70). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 0.25 v collector emitter saturation voltage . In addition, it has a typical 1 resistor ratio . The product offers single transistor configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. Whereas, it has a typical 4.7 kω input resistor . It has typical 52 weeks of manufacturer standard lead time. Base Part Number: nsvmun5132. It features pre-biased bipolar transistor (bjt) pnp - pre-biased 50v 100ma 202mw surface mount sc-70-3 (sot323). Furthermore, 15 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp - pre-biased type. Resistor - Base - 4.7 kohms. The 250mv @ 1ma, 10ma is the maximum Vce saturation. sc-70-3 (sot323) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 4.7 kohms. The maximum power of the product is 202mw. Moreover, the product comes in sc-70, sot-323. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Bond Wire 07/Mar/2020(PCN Assembly/Origin)
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Green Compound Update 04/Mar/2015(PCN Design/Specification)
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MUN(2,5)132, MMUN2132L, DTA143Exx, NSBA143EF3(Datasheets)

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