ON Semiconductor MUN5111DW1T1G

Enrgtech Part No: ET11409870
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Manufacturer Part No:
MUN5111DW1T1G
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Manufacturer: ON Semiconductor

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Product Information

The MUN5111DW1T1G is a versatile, high-performance NPN bipolar transistor manufactured by ON Semiconductor, combining excellent switching characteristics with low saturation voltage, making it a perfect option for a wide range of electronic applications.

Minimum DC Current Gain:

Transistor Type:

PNP

Dimensions:

2 x 1.25 x 0.9mm

Mounting Type:

Surface Mount

Maximum Continuous Collector Current:

100 mA

Maximum Collector Emitter Saturation Voltage:

0.25 V

Maximum Collector Emitter Voltage:

50 V

Height:

0.9mm

Width:

1.25mm

Length:

2mm

Package Type:

SOT-363 (SC-88)

Number of Elements per Chip:

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The ON Semiconductor MUN5111DW1T1G is a versatile, high-geared dual PNP transistor created for various applications in the electronics industry. This compact, surface-mount device offers excellent performance traits for multiple circuit configurations and systems. Its versatility makes it perfect for switching applications, signal amplification, and voltage regulation, among other uses. With its outstanding features, this transistor is a dependable option for demanding electronic designs.

Key Features of the ON Semiconductor MUN5111DW1T1G Include:

Dual PNP Transistor Configuration: The MUN5111DW1T1G features two independent PNP transistors in a single package, efficiently integrating complex circuit designs.
High Current Gain: With a typical current gain (hFE) of 100 to 300, this transistor provides ample amplification capabilities, making it suitable for signal amplification and switching applications.
Low Saturation Voltage: The low saturation voltage (VCE(sat)) of the MUN5111DW1T1G reduces power dissipation and enhances efficiency in switching applications.
Small Footprint: This transistor is available in a small, surface-mount package, enabling space-saving designs and compatibility with densely packed circuit boards.
Wide Operating Temperature Range: The MUN5111DW1T1G operates reliably across a temperature range of -55°C to +150°C, making it suitable for both commercial and industrial environments.

Typical Applications of the ON Semiconductor MUN5111DW1T1G:

Switching Applications: The high current gain and low saturation voltage of this transistor make it ideal for use in various switching applications, such as power management, motor control, and relay drivers.
Signal Amplification: With its excellent amplification capabilities, the MUN5111DW1T1G is commonly employed in audio amplifiers, RF amplifiers, and other signal processing circuits.
Voltage Regulation: The transistor can be used in voltage regulation circuits to stabilize and control voltage levels in power supplies and voltage regulators.

Prominent Benefits of Using the ON Semiconductor MUN5111DW1T1G:

Compact and Space-Saving: The small package size of this transistor allows for efficient use of board space, enabling compact and portable device designs.
Energy Efficiency: The low saturation voltage minimizes power dissipation, contributing to the energy-efficient operation and extended battery life in portable applications.
Reliable Performance: The wide operating temperature range and robust design of the MUN5111DW1T1G ensure reliable performance in challenging environments.
Versatile Integration: The dual PNP transistor design provides circuit design flexibility and seamless integration into numerous electronic systems.

Datasheet(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

Mult Dev Assembly 30/Jul/2020(PCN Assembly/Origin)

MUN5111DW1, NSBA114EDxx(Datasheets)

Copper Wire 08/Jun/2009(PCN Design/Specification)

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