Infineon SMBTA56E6327HTSA1 PNP Transistor, 500 mA, 80 V, 3-Pin SOT-23
Product Information
Minimum DC Current Gain:
100
Transistor Type:
PNP
Dimensions:
2.9 x 1.3 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
330 mW
Maximum Collector Emitter Saturation Voltage:
0.25 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Height:
0.9mm
Width:
1.3mm
Length:
2.9mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
500 mA
Maximum Emitter Base Voltage:
4 V
Transistor Material:
Si
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is PNP Transistor 500 mA 80 V 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is SMBTA56E6327HTSA1. It features up to 100 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 2.9 x 1.3 x 0.9mm. The product is available in surface mount configuration. Provides up to 330 mw maximum power dissipation. The product has a maximum 0.25 v collector emitter saturation voltage . Additionally, it has 80 v maximum collector base voltage. Whereas features a 80 v of collector emitter voltage (max). In addition, the height is 0.9mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.9mm. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 500 ma. It features a 4 v of maximum emitter base voltage. The transistor is manufactured from highly durable si material. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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