Infineon,Trans BCX42E6327
Product Information
Dimensions:
2.9 x 1.3 x 0.9mm
Maximum Collector Emitter Saturation Voltage:
0.9 V
Width:
1.3mm
Transistor Configuration:
Single
Maximum Operating Frequency:
150 MHz
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
125 V
Maximum Base Emitter Saturation Voltage:
1.4 V
Maximum Emitter Base Voltage:
5 V
Length:
2.9mm
Maximum DC Collector Current:
800 mA
Pin Count:
3
Minimum DC Current Gain:
63
Mounting Type:
Surface Mount
Maximum Power Dissipation:
330 mW
Maximum Collector Emitter Voltage:
125 V
Height:
0.9mm
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FAQs
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You can order Infineon brand products with BCX42E6327HTSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in BJT & Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon,Trans BCX42E6327. You can also check on our website or by contacting our customer support team for further order details on Infineon,Trans BCX42E6327.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16792337 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16792337.
Yes. We ship BCX42E6327HTSA1 Internationally to many countries around the world.
This is Trans BCX42E6327 manufactured by Infineon. The manufacturer part number is BCX42E6327HTSA1. The given dimensions of the product include 2.9 x 1.3 x 0.9mm. The product has a maximum 0.9 v collector emitter saturation voltage . Furthermore, the product is 1.3mm wide. The product offers single transistor configuration. It carries 150 mhz of maximum operating frequency. The package is a sort of sot-23. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has 125 v maximum collector base voltage. In addition, the product has a maximum 1.4 v base emitter saturation voltage . It features a 5 v of maximum emitter base voltage. Its accurate length is 2.9mm. Moreover, it has a maximum DC collector current of 800 ma. It contains 3 pins. It features up to 63 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 330 mw maximum power dissipation. Whereas features a 125 v of collector emitter voltage (max). In addition, the height is 0.9mm.
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