Infineon BCM856SH6327XTSA1 Dual PNP Transistor, -100 mA, -65 V, 6-Pin SOT-363

BCM-856S Infineon BCM856SH6327XTSA1 Dual PNP Transistor, -100 mA, -65 V, 6-Pin SOT-363
BCM 856S
Infineon

Product Information

Minimum DC Current Gain:
200
Transistor Type:
PNP
Dimensions:
2 x 1.25 x 0.8mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
250 mW
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
-65 V
Maximum Operating Frequency:
250 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
-100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
Checking for live stock

This is BCM856SH6327XTSA1 Dual PNP Transistor -100 mA -65 V 6-Pin SOT-363 manufactured by Infineon. The manufacturer part number is BCM 856S. It features up to 200 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 2 x 1.25 x 0.8mm. The product is available in surface mount configuration. Provides up to 250 mw maximum power dissipation. Additionally, it has 80 v maximum collector base voltage. Whereas features a -65 v of collector emitter voltage (max). It carries 250 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of -100 ma. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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BCM856S, PNP Silicon AF Transistor Array(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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