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Toshiba RN1106(TE85L,F) NPN Digital Transistor, 100 mA, 50 V, 3-Pin ESM

RN1106-TE85L-F- Toshiba RN1106(TE85L,F) NPN Digital Transistor, 100 mA, 50 V, 3-Pin ESM
Toshiba

Product Information

Minimum DC Current Gain:
80
Transistor Type:
NPN
Dimensions:
1.6 x 0.8 x 0.7mm
Mounting Type:
Surface Mount
Maximum Collector Emitter Voltage:
50 V
Maximum Emitter Base Voltage:
5 V
Package Type:
ESM
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Typical Resistor Ratio:
0.1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
4.7 kΩ
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This is NPN Digital Transistor 100 mA 50 V 3-Pin ESM manufactured by Toshiba. The manufacturer part number is RN1106(TE85L,F). It features up to 80 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 1.6 x 0.8 x 0.7mm. The product is available in surface mount configuration. Whereas features a 50 v of collector emitter voltage (max). It features a 5 v of maximum emitter base voltage. The package is a sort of esm. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. In addition, it has a typical 0.1 resistor ratio . The product offers single transistor configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. Whereas, it has a typical 4.7 kω input resistor .

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TRANSISTOR, DIGITAL, NPN, RN1106, PBFREE(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET25559185 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET25559185.
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